Research Areas

Advanced Material Design

To enhance properties of materials, We have controlled stoichiometry, crystal structure, defect of materials. In particular, exsolution of nanoparticles is highly influenced by composition factor of perovskites substrate such as A/O-deficiency, A/B-site cation.  Effect of These factors are analyzed in aspect of strain, diffusion, catalytic activity, structure, nucleation and growth, etc. Optimized materials via influence factor control can apply to multiple energy conversion/storage system.

Nano-structured Materials

The nano structured materials with nano-catalyst could show promising catalytic activity by increasing active site. However, these conventional methods require complex procedures including heat treatment, which cause oxidization of metallic nano-catalysts by being exposed at high temperature. As a solution to problems of conventional technology, In-situ exsolution of metallic nanoparticle is simply generated in form of embedded nanoparticles on the surface by being exposed to low Po2 environment at high temperature such as operation condition (H2, CO, CH4 etc.), electrochemical switching.

Thin/Thick Film Fabrications

We have thin/thick fabrication technology with Tape Casting, Screen Printing, RF-DC Sputtering, E-beam Evaporation, Coating method. The designed materials are manufactured from thin or thick film for energy conversion/storage devices. the tape casting is the method for mass production that can fabricate thick film for electrolyte. Sputtering and E-beam evaporation are also used for fabricating thin film for electrolyte. electrode is mostly manufactured by screen printing.


Various materials and fabrication methods are used to apply to energy application. The detailed application areas include the Solid Oxide Fuel/Eletrolysis Cells (SOFC/EC), Battery, Reforming catalyst and Gas Sensors. In particular, nano-structured materials with exsolution of catalyst can apply to anode of SOCs, sensing materials, reforming catalyst, Li-battery catalyst, etc.